We study how nitridation. applied to SiON gate layers. impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (HBD) characteristics of these devices. Experimental data demonstrate that p-channel transistors with SiON layers characterized by a highe... https://www.markbroyard.com/deal-time-gtech-airram-mk2-k9-roller-roll-brush-bar-filter-vacuum-cleaner-hot-on-sale-best-find/